smd type features adoption of fbet, mbit processes high breakdown voltage and large current capacity fast switching time 2SC3646 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6v collector current i c 1a collector current (pulse) i cp 2a p c 500 mw p c* 1.3 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = 100v , i e = 0 100 na emitter cut-off current i ebo v eb =4v,i c = 0 100 na collector-base breakdown voltage v (br)cbo i c = 10ua , i e = 0 120 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 100 v emitter-base breakdown voltage v (br)ebo i e = 10ua , i c =0 6 v dc current gain h fe v ce =5v,i c = 100ma 100 400 collector-emitter saturation voltage v ce(sat) i c = 400ma , i b = 40ma 0.2 0.6 v base-emitter saturation voltage v be(sat) i c = 400ma , i b = 40ma 0.85 1.2 v gain-bandwidth product f t v ce = 10v , i c = 100ma 120 mhz collector output capacitance c ob v cb = 10v , i e = 0 , f = 1mhz 13 pf turn-on time t on 80 storage time t stg 700 fall time t f 40 ns see test circuit. product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
smd type electrical characteristics curves test circuit h fe classification marking rank r s t h fe 100 200 140 280 200 400 cb 2SC3646 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
smd type 2SC3646 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
|
